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ZXMC3A18DN8
N-channel
Electrical characteristics (at T amb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max. Unit Conditions
Static
Drain-source breakdown
V (BR)DSS
30
V
I D = 250 A, V GS =0V
voltage
Zero gate voltage drain current I DSS
0.5
A
V DS =30V, V GS =0V
Gate-body leakage
I GSS
100
nA
V GS =±20V, V DS =0V
Gate-source threshold voltage V GS(th)
1.0
V
I D = 250 A, V DS =V GS
Static drain-source on-state
resistance (*)
R DS(on)
0.025
0.030
V GS = 10V, I D = 5.8A
V GS = 4.5V, I D = 5.3A
Forward transconductance (*)(?) g fs
17.5
S
V DS = 15V, I D = 5.8A
Dynamic (?)
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
1800
289
178
pF
pF
pF
V DS = 25V, V GS =0V
f=1MHz
Switching (?) (?)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
t d(on)
t r
t d(off)
t f
Q g
5.5
8.7
33
8.5
19.4
ns
ns
ns
ns
nC
V DD = 15V, I D = 6A
R G ? 6.0 , V GS = 10V
V DS = 15V, V GS = 5V
I D = 3.5A
Total gate charge
Gate-source charge
Gate drain charge
Q g
Q gs
Q gd
36
5.5
7.0
nC
nC
nC
V DS = 15V, V GS = 10V
I D = 3.5A
Source-drain diode
Diode forward voltage (*)
Reverse recovery time (?)
Reverse recovery charge (?)
V SD
t rr
Q rr
20.5
41.5
0.95
V
ns
nC
T j =25°C, I S = 6A, V GS =0V
T j =25°C, I S = 6A,
di/dt=100A/ s
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(?) Switching characteristics are independent of operating junction temperature.
(?) For design aid only, not subject to production testing.
Issue 2 - September 2007
? Zetex Semiconductors plc 2007
4
www.zetex.com
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